Optimierung des elektrischen Antriebsstrangs von Elektrofahrzeugen mit Betrachtung parasitärer Ströme innerhalb der elektrischen Maschine

• Optimization of electric vehicle drive trains with consideration of parasitic currents inside the electrical machine

Bubert, Andreas Martin; de Doncker, Rik W. (Thesis advisor); Kennel, Ralph (Thesis advisor)

Aachen : ISEA (2020)
Book, Dissertation / PhD Thesis

In: Aachener Beiträge des ISEA 141
Page(s)/Article-Nr.: 1 Online-Ressource (x, 215 Seiten) : Illustrationen, Diagramme

Dissertation, Rheinisch-Westfälische Technische Hochschule Aachen, 2020

Abstract

The objective of this research is to optimize drive trains of electric vehicles. In order to evaluate different optimization approaches, a modular simulation platform for electric vehicles is developed. Using this platform, it is possible to analyze the performance, energy consumption, volume and weight as well as costs of electric drive trains. Besides these common key factors, bearing currents and electrical bearing stress is further are taking into consideration while evaluating the drive trains. For this purpose, a high-frequency model of the electrical machine was developed. Optimized semiconductor chips for higher dc-link voltages, new inverter typologies (e. g. multi-level inverter) and technologies (e. g. silicon-carbide semiconductors) as well as different drive train configurations (e. g. multi-machine typologies, hybrid batteries) were analyzed in order to optimize the electric vehicle. A special focus was set on three-level neutral point clamped inverters. Besides control strategies, neutral-point balancing and limp-home capability are potential challenges or advantages of this topology and thus examined while optimizing the drive train. It can be concluded, that drive trains of electric vehicles still have a high potential for improvement. Multi-level typologies and new semiconductor technologies show a great potential but often going along with the disadvantage of higher filter effort, increased electrical bearing stress or semiconductor count.