High-Voltage 4H-SiC Thyristors With a Graded Etched Junction Termination Extension

New York, NY / IEEE (2011) [Journal Article]

IEEE electron device letters : EDL
Volume: 32
Issue: 10
Page(s): 1421-1423

Authors

Selected Authors

Pâques, Gontran
Scharnholz, Sigo
Dheilly, Nicolas
Planson, Dominique
de Doncker, Rik W.

Identifier