Highly integrated SiC power electronics on thermally partitioned ceramic substrates
The high integration of power-electronic systems based on SiC power semiconductors is an essential step on the way to the development of highly efficient and compact electronic systems. However, one major challenge remains: the extraction of power dissipation from the extremely narrow installation spaces and structures. This applies in particular to power logic integration, since the temperature and cycle robustness of the power semiconductors and logic components differs greatly.
In order to realize such highly integrated concepts, new cooling and module structures must be researched that allow thermal partitioning of the ceramic substrate. In this way, the power dissipation of the semiconductors can be dissipated efficiently and directly from the hotspots without limiting the reliability of the highly integrated logic components and passive components.
The main goal of ISEA is the research of commutation cells for power logic integrated silicon carbide (SiC) modules. Based on simulations, novel packaging and assembly structures based on ceramic substrates are developed and demonstrated using a universally applicable SiC half-bridge module. The half-bridge module uses thermally partitioned cooling structures to prevent feedback of the thermal energy of the power semiconductors to the nearby logic components.
01st September 2018 – 31th August 2021