SiC-Based Traction Inverters for Innovative Drive Concepts
In the scope of the BMBF fundet project "SiCnifikant", the advantages of SiC-based semiconductor components of power converters in electric vehicles are investigated. In particular, the design of a novel power module should demonstrate the optimal use of SiC semiconductors with regard to the achievable switching speed and power density. ISEA focusses on the design of the power modules and the required gate drivers.
The power module, which enables switching speeds of up to 50 kV/µs, aims at a power density of up to 75 kW/litre. Innovative driving circuits and AVT concepts will be designed for this purpose. Within the framework of the project, comprehensive research will be carried out, from the characterization of the semiconductor chip, the simulation and assembly of components to the evaluation of the effects on system level, followed by an in-depth evaluation.
The project further focuses on the design of gate drivers for paralleled SiC-MOSFETs. Due to the high switching speeds of the SiC MOSFETs, special gate drivers are required to ensure uniform current distribution of the parallel connected power MOSFETs. Additionaly, the gate drivers are designed to operate fail-safe with regard to the very high switching transients of SiC MOSFETs.
01st September, 2018 to 31st August, 2021